South Korean leading telecom giant has announced today that the brand has begun a mass production of its 5th-gen V-NAND flash memory.
This is the fifth iteration of the technology and the key feature here is the adoption of “Toggle DDR 4.0” NAND interface.
This would allow for a 40% faster transfer speeds between storage and RAM when compared to predecessor RAM, which pitched a peak of 1.4Gbps.
The new high-speed memory chip also delivers better power efficiency as well as 1.8 volts down to 1.2 volts.
The 5th-gen V-NAND chips are modeled after other previous chips, however, instead of incorporating 64 layers, the chip comes with 90 layers of 3D charge trap flash (CTF) cells. They are stacked in a pyramid-like structure with microscopic holes in the middle. These holes serve as channels and are just few hundred nanometers wide containing over 85 billion CTF cells each storing up to three bits of data.
This has led to a significant improvement in proccessor write speed – around 30% faster than the predecessor. The response time to read signals is also down to 50μs. The new high-performance 256GB chips will probably find their way to a number of upcoming Samsung devices including high-end smartphones.